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| 2N4125 Discrete POWER & Signal Technologies 2N4125 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 A to 100 mA. Sourced from Process 66. See 3906 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Collector-Emitter Voltage Value 30 30 4.0 200 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N4125 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation 2N4125 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, I C = 0 VCB = 20 V, IE = 0 VEB = 3.0 V, I C = 0 30 30 4.0 50 50 V V V nA nA ON CHARACTERISTICS* hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE = 1.0 V, I C = 2.0 mA VCE = 1.0 V, I C = 50 mA IC = 50 mA, IB = 5.0 mA IC = 50 mA, IB = 5.0 mA 50 25 150 0.4 0.95 V V SMALL SIGNAL CHARACTERISTICS Cob Cib hfe Output Capacitance Input Capacitance Small-Signal Current Gain VCB = 5.0 V, f = 100 kHz VBE = 0.5 V, f = 100 kHz I C = 2.0 mA, VCE = 10 V, f = 1.0 kHz I C = 10 mA, VCE = 20 V, f = 100 MHz VCE = 5.0 V, I C = 100 A, RS = 1.0 k, f = 10Hz to 15.7 kHz, 50 2.0 5.0 dB 4.5 10 200 pF pF NF Noise Figure *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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